ALD Oxides-Based <i>n-i-p</i> Heterostructure Light Emitting Diodes

ZnO - Based Light - Emitting Diodes

InP-Based Cylindrical Microcavity Light-Emitting Diodes

We have investigated the properties of InP-based microcavity light-emitting diodes ( = 1 6 m). Our objective was mainly to study the effects of lateral confinement of optical modes, which was achieved by the wet oxidation of double In0 52Al0 48As layers. The smallest devices had a cavity radius of 0.5 m, which becomes comparable to where is the effective refractive index of the photon emitting ...

10 GaN - based Light - Emitting Diodes

Light-emitting diodes (LEDs) offer several advantages over traditional light sources, such as smaller size, longer lifetime, higher efficiency, and greater mechanical ruggedness. Continuing developments in LED technology are producing devices with increased output power and efficiency as well as a wider range of colors [1]. Recent progress in the fabrication of GaN-based compound semiconductors...

Vertical Nanowire Array-Based Light Emitting Diodes

Address correspondence to [email protected] ABSTRACT Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin fi lm grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin fi lm through a simple low temperature solution method. The fabricated devices ex...

Light-emitting silicon pn diodes

We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which ...